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The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com
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HM6216514I Series
Wide Temperature Range Version 8 M SRAM (512-kword x 16-bit)
ADE-203-1303B (Z) Rev. 1.0 Oct. 23, 2002
Description
The Hitachi HM6216514I Series is 8-Mbit static RAM organized 524,288-word x 16-bit. HM6216514I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 44-pin plastic TSOPII.
Features
* * * Single 5.0 V supply: 5.0V 10 % Fast access time: 55 ns (Max) Power dissipation: Active: 10 mW/MHz (Typ) Standby: 7.5 W (Typ) Completely static memory. No clock or timing strobe required Equal access and cycle times Common data input and output. Three state output Battery backup operation. Temperature range: -40 to +85C
* * * * *
HM6216514I Series
Ordering Information
Type No. HM6216514LTTI-5SL Access time 55 ns Package 400-mil 44-pin plastic TSOPII (normal-bend type) (TTP-44DE)
2
HM62162514I Series
Pin Arrangement
44-pin TSOP A4 A3 A2 A1 A0 CS I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 WE A18 A17 A16 A15 A14 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 (Top view) 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB I/O15 I/O14 I/O13 I/O12 VSS VCC I/O11 I/O10 I/O9 I/O8 A8 A9 A10 A11 A12 A13
Pin Description
Pin name A0 to A18 I/O0 to I/O15 CS WE OE LB UB VCC VSS Function Address input Data input/output Chip select Write enable Output enable Lower byte select Upper byte select Power supply Ground
3
HM6216514I Series
Block Diagram
LSB V CC V SS
* * * * *
A5 A6 A7 A4 A3 A8 A9 A10 A11 A12 MSB A13
Row decoder
Memory matrix 2,048 x 2,048
I/O0 Input data control I/O15
* *
Column I/O Column decoder
* *
LSB A15 A16 A17 A18 A0 A1 A2 A14MSB
* *
CS LB UB WE OE
Control logic
4
HM62162514I Series
Operation Table
CS H x L L L L L L L WE x x H H H L L L H OE x x L L L x x x H UB x H L H L L H L x LB x H L L H L L H x I/O0 to I/O7 High-Z High-Z Dout Dout High-Z Din Din High-Z High-Z I/O8 to I/O15 High-Z High-Z Dout High-Z Dout Din High-Z Din High-Z Operation Standby Standby Read Lower byte read Upper byte read Write Lower byte write Upper byte write Output disable
Note: H: V IH, L: VIL, x: VIH or VIL
Absolute Maximum Ratings
Parameter Power supply voltage relative to V SS Terminal voltage on any pin relative to V SS Power dissipation Storage temperature range Storage temperature range under bias Symbol VCC VT PT Tstg Tbias Value -0.5 to + 7.0 -0.5* to V CC + 0.3* 1.0 -55 to +125 -40 to +85
1 2
Unit V V W C C
Notes: 1. VT min: -3.0 V for pulse half-width 30 ns. 2. Maximum voltage is +7.0 V.
DC Operating Conditions
Parameter Supply voltage Symbol VCC VSS Input high voltage Input low voltage Ambient temperature range Note: VIH VIL Ta Min 4.5 0 2.2 -0.3 -40 Typ 5.0 0 -- -- -- Max 5.5 0 VCC + 0.3 0.8 85 Unit V V V V C 1 Note
1. VIL min: -3.0 V for pulse half-width 30 ns.
5
HM6216514I Series
DC Characteristics
Parameter Input leakage current Output leakage current Symbol Min |ILI| |ILO | -- -- Typ* 1 Max -- -- 1 1 Unit A A Test conditions Vin = VSS to V CC CS = VIH or OE = VIH or WE = VIL or, LB = UB =VIH , VI/O = VSS to V CC CS = VIL, Others = VIH/VIL, I I/O = 0 mA Min. cycle, duty = 100%, I I/O = 0 mA, CS = VIL, Others = VIH/VIL Cycle time = 1 s, duty = 100%, I I/O = 0 mA, CS 0.2 V, VIH V CC - 0.2 V, VIL 0.2 V CS = VIH 0 V Vin (1) CS V CC - 0.2 V or (2) LB = UB V CC - 0.2 V, CS 0.2 V I OH = -1 mA I OL = 2.1 mA
Operating current Average operating current
I CC I CC1
-- --
-- 16
20 35
mA mA
I CC2
--
2
5
mA
Standby current Standby current
I SB I SB1
-- --
0.1 0.8
0.3 10
mA A
Output high voltage Output low voltage
VOH VOL
2.4 --
-- --
-- 0.4
V V
Notes: 1. Typical values are at VCC = 5.0 V, Ta = +25C and not guaranteed.
Capacitance (Ta = +25C, f = 1.0 MHz)
Parameter Input capacitance Input/output capacitance Note: Symbol Cin CI/O Min -- -- Typ -- -- Max 8 10 Unit pF pF Test conditions Vin = 0 V VI/O = 0 V Note 1 1
1. This parameter is sampled and not 100% tested.
6
HM62162514I Series
AC Characteristics (Ta = -40 to +85C, VCC = 5.0 V 10 %, unless otherwise noted.)
Test Conditions * * * * Input pulse levels: VIL = 0.4 V, VIH = 2.2 V Input rise and fall time: 5 ns Input and output timing reference levels: 1.5 V Output load: 1 TTL Gate + C L (50 pF) (Including scope and jig)
Read Cycle
HM6216514I -5 Parameter Read cycle time Address access time Chip select access time Output enable to output valid Output hold from address change LB, UB access time Chip select to output in low-Z LB, UB enable to low-z Output enable to output in low-Z Chip deselect to output in high-Z LB, UB disable to high-Z Output disable to output in high-Z Symbol t RC t AA t ACS t OE t OH t BA t CLZ t BLZ t OLZ t CHZ t BHZ t OHZ Min 55 -- -- -- 10 -- 10 5 5 0 0 0 Max -- 55 55 35 -- 55 -- -- -- 20 20 20 Unit ns ns ns ns ns ns ns ns ns ns ns ns 2, 3 2, 3 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 Notes
7
HM6216514I Series
Write Cycle
HM6216514I -5 Parameter Write cycle time Address valid to end of write Chip selection to end of write Write pulse width LB, UB valid to end of write Address setup time Write recovery time Data to write time overlap Data hold from write time Output active from end of write Output disable to output in high-Z Write to output in high-Z Symbol t WC t AW t CW t WP t BW t AS t WR t DW t DH t OW t OHZ t WHZ Min 55 50 50 40 50 0 0 25 0 5 0 0 Max -- -- -- -- -- -- -- -- -- -- 20 20 Unit ns ns ns ns ns ns ns ns ns ns ns ns 2 1, 2 1, 2 6 7 5 4 Notes
Notes: 1. t CHZ, tOHZ , t WHZ and tBHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referred to output voltage levels. 2. This parameter is sampled and not 100% tested. 3. At any given temperature and voltage condition, t HZ max is less than tLZ min both for a given device and from device to device. 4. A write occures during the overlap of a low CS, a low WE and a low LB or a low UB. A write begins at the latest transition among CS going low, WE going low and LB going low or UB going low. A write ends at the earliest transition among CS going high, WE going high and LB going high or UB going high. t WP is measured from the beginning of write to the end of write. 5. t CW is measured from the later of CS going low to the end of write. 6. t AS is measured from the address valid to the beginning of write. 7. t WR is measured from the earliest of CS or WE going high to the end of write cycle.
8
HM62162514I Series
Timing Waveform
Read Cycle
t RC Address tAA tACS CS tCLZ*2, 3 tCHZ*1, 2, 3 tBHZ*1, 2, 3 tBA LB, UB tBLZ*2, 3 tOHZ*1, 2, 3 tOE OE tOLZ*2, 3 Dout High impedance Valid data tOH Valid address
9
HM6216514I Series
Write Cycle (1) (WE Clock)
tWC Address Valid address tWR*7
tCW*5 CS tBW LB, UB tAW tWP*4 WE tAS*6 tDW Din tWHZ*1, 2 Valid data
tDH
tOW*2 High impedance
Dout
10
HM62162514I Series
Write Cycle (2) (CS Clock, OE = VIH)
tWC Address Valid address tAW tAS*6 CS tBW LB, UB tCW*5 tWR*7
tWP*4 WE tDW Din Valid data tDH
High impedance Dout
11
HM6216514I Series
Write Cycle (3) (LB, UB Clock, OE = VIH)
tWC Address Valid address tAW tCW*5 CS tAS*6 LB, UB tBW tWR*7
tWP*4 WE tDW Din Valid data tDH
High impedance Dout
12
HM62162514I Series
Low VCC Data Retention Characteristics (Ta = -40 to +85C)
Parameter VCC for data retention Symbol VDR Min 2.0 Typ* 2 -- Max -- Unit V Test conditions*1 Vin 0V (1) CS V CC - 0.2 V or (2) LB = UB V CC - 0.2 V CS 0.2 V VCC = 3.0 V, Vin 0V (1) CS V CC - 0.2 V or (2) LB = UB V CC - 0.2 V CS 0.2 V See retention waveform
Data retention current
I CCDR
--
0.8
10
A
Chip deselect to data retention time t CDR Operation recovery time tR
0 t RC*
3
-- --
-- --
ns ns
Notes: 1. CS controls address buffer, WE buffer, OE buffer, LB, UB buffer and Din buffer. If CS controls data retention mode, Vin levels (address, WE, OE, LB, UB, I/O) can be in the high impedance state. If LB, UB controls data retention mode, LB, UB must be LB = UB V CC - 0.2 V, CS must be CS 0.2 V. The other input levels (address, WE, OE, I/O) can be in the high impedance state. 2. Typical values are at VCC = 3.0 V, Ta = +25C and not guaranteed. 3. t RC = read cycle time.
13
HM6216514I Series
Low V CC Data Retention Timing Waveform (1) (CS Controlled)
Data retention mode tR
t CDR V CC 4.5 V
2.2 V V DR CS 0V CS VCC - 0.2 V
Low V CC Data Retention Timing Waveform (2) (LB, UB Controlled)
Data retention mode tR
t CDR V CC 4.5 V
2.2 V V DR LB, UB 0V LB, UB VCC - 0.2 V
14
HM62162514I Series
Package Dimensions
HM6216514LTTI Series (TTP-44DE)
As of January, 2002
18.41 18.81 Max 44 23
Unit: mm
1 *0.27 0.07 0.25 0.05
0.80 0.13 M
22 0.80
10.16
1.005 Max *0.145 0.05 0.125 0.04
11.76 0.20 0.50 0.10 0.68 0 - 5 0.13 0.05
1.20 Max
0.10
*Dimension including the plating thickness Base material dimension
Hitachi Code JEDEC JEITA Mass (reference value)
TTP-44DE -- -- 0.43 g
15
HM6216514I Series
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109
URL
http://www.hitachisemiconductor.com/
For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Europe GmbH Electronic Components Group Dornacher Str 3 D-85622 Feldkirchen Postfach 201,D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-6538-6533/6538-8577 Fax : <65>-6538-6933/6538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://semiconductor.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-2735-9218 Fax : <852>-2730-0281 URL : http://semiconductor.hitachi.com.hk
Copyright C Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 7.0
16

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